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FGA25N120AN
IGBT
FGA25N120AN
General Description
Employing NPT technology, Fairchild's AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
Features
* High speed switching * Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A * High input impedance
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
C
G E
TO-3P
GCE
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) PD TJ Tstg TL
TC = 25C unless otherwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
@ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C
FGA25N120AN 1200 20 40 25 75 310 125 -55 to +150 -55 to +150 300
Units V V A A A W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 0.4 40 Units C/W C/W
(c)2004 Fairchild Semiconductor Corporation
FGA25N120AN Rev. A
FGA25N120AN
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 3mA VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ----0.6 ----3 100 V V/C mA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 25mA, VCE = VGE IC = 25A, VGE = 15V IC = 25A, VGE = 15V, TC = 125C IC = 40A, VGE = 15V 3.5 ---5.5 2.5 2.9 3.1 7.5 3.2 --V V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2100 180 90 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------60 60 170 45 4.8 1.0 5.7 60 60 180 70 5.5 1.4 6.9 200 15 105 14 ---90 7.2 1.5 8.7 -------300 23 160 -ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC nH
VCC = 600 V, IC = 25A, RG = 10, VGE = 15V, Inductive Load, TC = 25C
VCC = 600 V, IC = 25A, RG = 10, VGE = 15V, Inductive Load, TC = 125C
VCE = 600 V, IC = 25A, VGE = 15V Measured 5mm from PKG
(c)2004 Fairchild Semiconductor Corporation
FGA25N120AN Rev. A
FGA25N120AN
180 TC = 25 160 140 20V 17V 15V 12V
120 Common Emitter VGE = 15V TC = 25 TC = 125
100
Collector Current, IC [A]
Collector Current, IC [A]
120 100 VGE = 10V 80 60 40 20 0 0 2 4 6 8 10
80
60
40
20
0 0 2 4 6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4.0 Common Emitter VGE = 15V
50 Vcc = 600V load Current : peak of square wave 40
Collector-Emitter Voltage, VCE [V]
40A 3.5
Load Current [A]
30
3.0
IC = 25A
20
2.5
10 Duty cycle : 50% Tc = 100 Powe Dissipation = 60W
2.0 25 50 75 100 125
0 0.1 1 10 100 1000
Case Temperature, T C []
Frequency [kHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter TC = 25
20 Common Emitter TC = 125
Collector-Emitter Voltage, VCE [V]
16
Collector-Emitter Voltage, VCE [V]
16
12
12
8
8
40A 4 25A IC = 12.5A 0 0 4 8 12 16 20
4 IC = 12.5A 0 0 4 8
40A 25A
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2004 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
FGA25N120AN Rev. A
FGA25N120AN
4000 3500 3000 Common Emitter V GE = 0V, f = 1MHz T C = 25 100 Ciss
Switching Time [ns]
Capacitance [pF]
2500 2000 1500
tr
td(on)
Coss 1000 Crss 500 0 1 10
Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 TC = 125 10 0 10 20 30 40 50 60 70
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG []
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
1000
Switching Loss [mJ]
Switching Time [ns]
Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 TC = 125
td(off) 10
Common Emitter V CC = 600V, VGE = 15V IC = 25A T C = 25 T C = 125
Eon
100 tf
Eoff
1
10 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
Gate Resistance, RG []
Gate Resistance, R G []
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter VGE = 15V, RG = 10 TC = 25 TC = 125
Common Emitter VGE = 15V, RG = 10 TC = 25 TC = 125
td(off)
100
Switching Time [ns]
Switching Time [ns]
tr
100 tf
td(on)
10
20
30
40
50
10
20
30
40
50
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2004 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
FGA25N120AN Rev. A
FGA25N120AN
16 Common Emitter VGE = 15V, RG = 10 TC = 25 TC = 125 14 Eon Common Emitter RL = 24 TC = 25 600V 10 400V 8 6 4 2 0 10 20 30 40 50 0 20 40 60 80 100 120 140 160 180 200 Vcc = 200V
Gate-Emitter Voltage, VGE [V]
10
12
Switching Loss [mJ]
Eoff 1
0.1
Collector Current, IC [A]
Gate Charge, Q g [nC]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100 100 Ic MAX (Pulsed) 50s Ic MAX (Continuous) 100s
Collector Current, Ic [A]
10 1ms DC Operation 1
Collector Current, IC [A]
10
0.1
Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000
0.01
1 1 10
Safe Operating Area VGE = 15V, TC = 125 100 1000
Collector - Emitter Voltage, V CE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
10
Thermal Response [Zthjc]
1 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 single pulse 1E-3 1E-5
Pdm Pdm t1 t1 t2 t2 Duty factor D = t1 // t2 Duty factor D = t1 t2 Peak Tj = Pdm x Zthjc + TC Peak Tj = Pdm x Zthjc + TC
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
(c)2004 Fairchild Semiconductor Corporation FGA25N120AN Rev. A
FGA25N120AN
Package Dimension
TO-3P (FS PKG CODE)
15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation FGA25N120AN Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST(R) FASTrTM BottomlessTM FRFETTM CoolFETTM CROSSVOLTTM GlobalOptoisolatorTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM EnSignaTM ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM
Power247TM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I6

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